Schottky barriers in carbon nanotube-metal contacts

Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

  Svensson, Johannes ^a   Campbell, Eleanor E B ^b,c  

^a LUND UNIVERSITY   (Sweden)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c Konkuk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MATERIALS; EXPERIMENTAL TECHNIQUES; GATE LENGTH SCALING; HIGH CURRENT DENSITIES; HIGH MOBILITY; N-TYPE OHMIC CONTACT; P-TYPE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SEMICONDUCTING CARBON NANOTUBES; SIMPLE CIRCUITS; SINGLE TRANSISTORS; THEORETICAL PREDICTION;

CARBON NANOTUBES; FIELD EFFECT TRANSISTORS; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES;

METALS;

EID: 84858435155     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3664139     Document Type: Review

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