The effect of fixed charge in tunnel-barrier contacts for fermi-level depinning in Germanium

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 761-763

  Roy, Arunanshu M ^a   Lin, Jason ^a   Saraswat, Krishna C ^a  

^a Stanford University   (United States)

Author keywords

Fermi level pinning; Schottky barrier; specific contact resistivity; tunneling barrier

Indexed keywords

DEPINNING; FERMI LEVEL PINNING; FERMI-LEVEL UNPINNING; FIXED CHARGES; INTERFACE LAYER; N-TYPE GE; SCHOTTKY BARRIERS; SPECIFIC CONTACT RESISTIVITY; THIN TUNNEL BARRIERS; TUNNELING BARRIER;

SCHOTTKY BARRIER DIODES;

GERMANIUM;

EID: 84861662786     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191386     Document Type: Article

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