Controlled modification of Schottky barrier height by partisan interlayer

Solid State Communications

Volumn 151, Issue 22, 2011, Pages 1641-1644

  Li, Yang ^a   Long, Wei ^a   Tung, Raymond T ^a  

^a CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

A. Semiconductors; A. Surfaces and interfaces; D. Electronic transport

Indexed keywords

A. SURFACES AND INTERFACES; ATOMIC LAYER; CONTROLLED MODIFICATION; ELECTRONIC TRANSPORT; SCHOTTKY BARRIER HEIGHTS; SEMI-CONDUCTOR SURFACES; SURFACE DIPOLE; SYSTEMATIC METHOD; THEORETICAL RESULT;

ADSORBATES; CHEMICAL STABILITY; CHLORINE; COMPOSITE FILMS; ELECTRON AFFINITY; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 80053574875     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2011.08.017     Document Type: Article

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