Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics

Applied Physics Letters

Volumn 81, Issue 3, 2002, Pages 562-564

  Loo, Yueh Lin ^a   Willett, Robert L ^a   Baldwin, Kirk W ^a   Rogers, John A ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; COMPLEMENTARY INVERTERS; CONTACT PRINTING; CONTACT TIME; ELECTRICAL CONTACTS; METAL FILM; METAL PATTERNS; NANOSCALE PATTERNING; NANOTRANSFER PRINTING (NTP); ORGANIC TRANSISTOR; PHYSICAL CONTACTS; PLASTIC ELECTRONICS; PROCESSING STEPS; TRANSFER PROCESS;

METALLIC FILMS; PRINTING; SURFACE CHEMISTRY;

LITHOGRAPHY;

EID: 79956054356     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1493226     Document Type: Article

References (23)

1. C. A. Mirkin and J. A. Rogers, MRS Bull. 26, 530 (2001). mbu MRSBEA 0883-7694
2. Y. Xia, J. A. Rogers, K. E. Paul, and G. M. Whitesides, Chem. Rev. 99, 1823 (1999). chr CHREAY 0009-2665
3. L. H. Dubois and R. G. Nuzzo, Annu. Rev. Phys. Chem. 43, 437 (1992). arc ARPLAP 0066-426X
4. A. Kumar and G. M. Whitesides, Appl. Phys. Lett. 63, 2002 (1993). apl APPLAB 0003-6951
5. Y. Xia and G. M. Whitesides, Angew. Chem. Int. Ed. Engl. 37, 550 (1998). aci ACIEAY 0570-0833
6. J. Hyun, Y. J. Zhu, A. Liebmann-Vinson, T. P. Beebe, and A. Chilkoti, Langmuir 17, 6358 (2001). lan LANGD5 0743-7463
7. J. A. Rogers, Z. Bao, K. W. Baldwin, A. Dodabalapur, B. Crone, V. R. Raju, V. Kuck, H. E. Katz, K. Amundson, J. Ewing, and P. Drzaic, Proc. Natl. Acad. Sci. U.S.A. 98, 4835 (2001). pna PNASA6 0027-8424
8. J. A. Rogers, Science 291, 1502 (2001). sci SCIEAS 0036-8075
9. J. A. Rogers, R. J. Jackan, G. M. Whitesides, J. L. Wagener, and A. M. Vengsarkar, Appl. Phys. Lett. 70, 7 (1997). apl APPLAB 0003-6951
10. S. Y. Chou, P. R. Krauss, and P. J. Renstrom, Science 272, 85 (1996). sci SCIEAS 0036-8075
11. C. Kim, P. E. Burrows, and S. R. Forrest, Science 288, 831 (2000). sci SCIEAS 0036-8075
12. Y.-L. Loo, R. L. Willett, K. W. Baldwin, and J. A. Rogers, J. Am. Chem. Soc. (to be published).
13. S. L. Lehoczsky, R. J. Lederich, and J. J. Bellina, Thin Solid Films 55, 125 (1978). tsf THSFAP 0040-6090
14. 3/min and pressure of 30 mTorr at 100 V. The stamp was first exposed to the oxygen plasma for 4 min. The substrate was then placed in the chamber, and both the stamp and substrate were oxidized for an additional 5 s.
15. M. Nakamura, S. Kato, T. Aoki, L. Sirghi, and Y. Hatanaka, J. Appl. Phys. 90, 3391 (2001). jap JAPIAU 0021-8979
16. M. Nakamura, T. Aoki, and Y. Hatanaka, Vacuum 59, 506 (2001). vac VACUAV 0042-207X
17. R. Wang, K. Hasimoto, A. Fujishima, M. Chikuni, E. Kojima, A. Kitamura, M. Shimohigoshi, and T. Watanabe, Nature (London) 388, 431 (1997). nat NATUAS 0028-0836
18. Y.-L. Loo, T. Someya, K. W. Baldwin, Z. Bao, P. K. Ho, A. Dodabalapur, H. E. Katz, and J. A. Rogers (unpublished data).
19. O. J. A. Schueller, D. C. Duffy, J. A. Rogers, S. T. Brittain, and G. M. Whitesides, Sens. Actuators A 78, 149 (1999). sac SAAPEB 0924-4247
20. G. S. Ferguson, M. K. Chaudhury, G. B. Sigal, and G. M. Whitesides, Science 253, 776 (1991). sci SCIEAS 0036-8075
21. W. Zhang and S. Y. Chou, Appl. Phys. Lett. 79, 845 (2001). apl APPLAB 0003-6951
22. D. J. Gundlach, Y. Y. Lin, and T. N. Jackson, IEEE Electron Device Lett. 18, 87 (1997). edl EDLEDZ 0741-3106
23. Z. Bao, A. J. Lovinger, and J. Brown, J. Am. Chem. Soc. 120, 207 (1998). acs JACSAT 0002-7863