SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 24, Issue 11, 2013, Pages

Enhancement of the Schottky barrier height of Au/ZnO nanocrystal by zinc vacancies using a hydrothermal seed layer

(3) Hwang, J D a Lin, Y L b Kung, C Y b

a NATIONAL CHIAYI UNIVERSITY (Taiwan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; IV CHARACTERISTICS; OHMIC BEHAVIOR; OXYGEN PLASMAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SI SUBSTRATES; ZNO NANOCRYSTAL;

ELECTRIC PROPERTIES; NANOCRYSTALS; PHOTOELECTRONS; SCHOTTKY BARRIER DIODES; SOL-GEL PROCESS; SOL-GELS; VACANCIES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

ZINC;

EID: 84874859103 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/24/11/115709 Document Type: Article

Times cited : (29)

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