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Volumn 19, Issue 23, 2007, Pages 4103-4117

Electrostatic properties of ideal and non-ideal polar organic monolayers: Implications for electronic devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRONIC EQUIPMENT; ELECTROSTATICS; SIZE DETERMINATION;

EID: 37149008098     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200701681     Document Type: Article
Times cited : (227)

References (115)
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    • (1999) Molecular Electronics: Science and Technology
  • 3
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    • Eds: G. Cuniberti, G. Fagas, K. Richter, Springer, Berlin
    • Introducing Molecular Electronics (Eds: G. Cuniberti, G. Fagas, K. Richter), Springer, Berlin 2005.
    • (2005) Introducing Molecular Electronics
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    • L. Kronik, Y. Shapira, Surf. Sci. Rep. 1999, 37, 1, Sections 2.1.4, 2.1.5, and 5.2.
  • 39
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    • In Equations 7 and 9 the potential is expressed using complex notation for convenience. However, the result is necessarily real because the contributions from the m,n and -m-n terms in the summation are so that the imaginary part is zero.
    • In Equations 7 and 9 the potential is expressed using complex notation for convenience. However, the result is necessarily real because the contributions from the m,n and -m-n terms in the summation are so that the imaginary part is zero.
  • 40
    • 37149046926 scopus 로고    scopus 로고
    • 2d is taken to zero when d tends to zero. This is not a valid limit for an arbitrary m,n pair as these Fourier indices can be arbitrarily large. However, because of the exponential decay in z, one can always find an m,n pair of values such that all potential terms above it are arbitrarily small. Therefore, the limit needs to be taken in practice only for finite values of m,n and is therefore correct.
    • 2d is taken to zero when d tends to zero. This is not a valid limit for an arbitrary m,n pair as these Fourier indices can be arbitrarily large. However, because of the exponential decay in z, one can always find an m,n pair of values such that all potential terms above it are arbitrarily small. Therefore, the limit needs to be taken in practice only for finite values of m,n and is therefore correct.
  • 43
    • 37149051039 scopus 로고    scopus 로고
    • Note that details of the electrostatic potential near the nuclei differ in parts (a) and (b) of Figure 3. This is merely a consequence of whether the electrostatic potential is computed directly (as in b) or derived from the computed dipole (as in a). This difference is a technical consequence of the use of pseudopotentials and bears no physical significance for the present discussion. For elaboration, see Section 4 of ref. [39].
    • Note that details of the electrostatic potential near the nuclei differ in parts (a) and (b) of Figure 3. This is merely a consequence of whether the electrostatic potential is computed directly (as in b) or derived from the computed dipole (as in a). This difference is a technical consequence of the use of pseudopotentials and bears no physical significance for the present discussion. For elaboration, see Section 4 of ref. [39].
  • 58
    • 0028766285 scopus 로고    scopus 로고
    • M. Bruening, E. Moons, D. Yaron-Marcovich, D. Cahen, J. Libman, A. Shanzer, D. Am. Chem. Soc. 1994, 116, 2972.
    • M. Bruening, E. Moons, D. Yaron-Marcovich, D. Cahen, J. Libman, A. Shanzer, D. Am. Chem. Soc. 1994, 116, 2972.
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    • 37149012473 scopus 로고    scopus 로고
    • By definition, the dipole moment is a vector oriented from the negative to the positive pole. Here, we define a dipole as negative if its negative pole is closer to the semiconductor surface and positive if the negative pole. Note that sometimes the opposite definition is adopted
    • By definition, the dipole moment is a vector oriented from the negative to the positive pole. Here, we define a dipole as negative if its negative pole is closer to the semiconductor surface and positive if the negative pole. Note that sometimes the opposite definition is adopted.
  • 84
    • 37149021780 scopus 로고    scopus 로고
    • A quantitative analysis would require that Equations 3 and 4 be written for each dipole separately. The electric field and dipole become position-dependent and a set of coupled equations need to be solved self-consistently. Such analysis is not pursued here.
    • A quantitative analysis would require that Equations 3 and 4 be written for each dipole separately. The electric field and dipole become position-dependent and a set of coupled equations need to be solved self-consistently. Such analysis is not pursued here.
  • 87
    • 37149011554 scopus 로고    scopus 로고
    • 3-terminated dicarboxylic acid)/n-GaAs one discussed here, produce two main types of contacts: (a) direct metal-semiconductor contacts in the pinhole domains, and (b) metal-molecule-semiconductor contacts.
    • 3-terminated dicarboxylic acid)/n-GaAs one discussed here, produce two main types of contacts: (a) direct metal-semiconductor contacts in the pinhole domains, and (b) metal-molecule-semiconductor contacts.
  • 88
    • 0347591076 scopus 로고    scopus 로고
    • See. e.g., A. Salomon, D. Cahen, S. Lindsay, J. Tomfohr, V. B. Engelkes. C. D. Frisbie, Adv. Mater. 2003, 15, 1881.
    • See. e.g., A. Salomon, D. Cahen, S. Lindsay, J. Tomfohr, V. B. Engelkes. C. D. Frisbie, Adv. Mater. 2003, 15, 1881.
  • 91
    • 37149012168 scopus 로고    scopus 로고
    • The term pinch-off describes the modulation of electric potential profiles under the low barrier height interface regions, as a result of nm-scale spatial inhomogeneities in the barrier height of the metal/ semiconductor contacts
    • The term "pinch-off" describes the modulation of electric potential profiles under the low barrier height interface regions, as a result of nm-scale spatial inhomogeneities in the barrier height of the metal/ semiconductor contacts.
  • 105
    • 4644230429 scopus 로고    scopus 로고
    • F. Patolsky, G. F. Zheng. O. Hayden, M. Lakadamyali, X. W. Zhuang, C. M. Lieber, Proc. Natl. Acad. S0ci. USA 2004, 101, 14017.
    • F. Patolsky, G. F. Zheng. O. Hayden, M. Lakadamyali, X. W. Zhuang, C. M. Lieber, Proc. Natl. Acad. S0ci. USA 2004, 101, 14017.
  • 111
    • 0041947020 scopus 로고    scopus 로고
    • The above discussion referred only to dipoles adsorbed on the sides of the nano-wire or nano-tube. Dipoles at the edge, i.e., between the nano-tube or nano-wire and, e.g.. a metal contact are not considered here. Note, however, that because of the reduced dimensionality at such junctions their behavior is different from that of ordinary Schottky barriers. See, e.g., a F. Leonard. J. Tersoff, Phys. Rev. Lett. 2000, 84, 4693.
    • The above discussion referred only to dipoles adsorbed on the sides of the nano-wire or nano-tube. Dipoles at the edge, i.e., between the nano-tube or nano-wire and, e.g.. a metal contact are not considered here. Note, however, that because of the reduced dimensionality at such junctions their behavior is different from that of ordinary Schottky barriers. See, e.g., a) F. Leonard. J. Tersoff, Phys. Rev. Lett. 2000, 84, 4693.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.