Electrostatics of nanowire transistors

IEEE Transactions on Nanotechnology

Volumn 2, Issue 4, 2003, Pages 329-334

  Guo, Jing ^a   Wang, Jing ^a   Polizzi, Eric ^a   Datta, Supriyo ^a   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

Electrostatic analysis; Nanotecnology; Transistors

Indexed keywords

BOUNDARY CONDITIONS; CHARGE TRANSFER; ELECTRIC FIELDS; ELECTRIC INSULATORS; ELECTROSTATICS; FERMI LEVEL; NANOTECHNOLOGY; PERMITTIVITY; POISSON EQUATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS;

ELECTROSTATIC ANALYSIS; SCHOTTKY BARRIER HEIGHTS; SEMICONDUCTOR CONTACTS;

NANOSTRUCTURED MATERIALS;

EID: 2442509519     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2003.820518     Document Type: Conference Paper

References (15)

1. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. Dai, "Ballistic carbon nanotube field-effect transistors," Nature, vol. 424, pp. 654-657, 2003.
2. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and Ph. Avouris, "Carbon nanotubes as schottky barrier transistors," Phys. Rev. Let., vol. 89, no. 10, p. 106 801, 2002.
3. Y. Cui, Z. Zhong, D. Wang, W. Wang, and M. Lieber, "High performance silicon nanowire field effect transistors," Nano Lett., vol. 3, pp. 149-152, 2003.
4. F. Leonard and J. Tersoff, "Novel length scales in nanotube devices," Phys. Rev. Lett., vol. 83, pp. 5174-5177, 1999.
5. A. Odintsov, "Schottky barriers in carbon nanotube heterojunctions," Phys. Rev. Lett, vol. 85, pp. 150-153, 2000.
6. F. Leonard and J. Tersoff, "Role of fermi-level pinning in nanotube schottky diodes," Phys. Rev. Lett., vol. 84, pp. 4693-4696, 2000.
7. J. W. Mintmire and C. T. White, "Universal density of states for carbon nanotubes," Phys. Rev. Lett., vol. 81, pp. 2506-2509, 1998.
8. S. Ramo, J. R. Whinnery, and T. V. Duzer, Field and Waves in Communication Electronics. New York: Wiley, 1994.
9. Z. Rer, "Nanoscale MOSFET: Physics simulation and design," Ph.D. dissertation, Purdue University, West Lafayette, IN, 2001.
10. S. Luryi, "Quantum capacitance devices," Appl. Phys. Lett., vol. 52, pp. 501-503, 1988.
11. J. Guo et al., "Assessment of silicon MOS and carbon nanotube FET performance limitsusing a general theory of ballistic transistors," in IEDM Tech. Dig., 2002, pp. 711-714.
12. A. Javey et al., "High dielectrics for advanced carbon nanotube transistors and logic," Nature Materials, vol. 1, pp. 241-246, 2002.
13. J. E. Jackson, Classical Electrodynamics. New York: Wiley, 1975.
14. D. John, L. Castro, J. Clifford, and D. Pulfrey, "Electrostatics of coakia schottky-barrier nanotube field-effect transistors," IEEE Trans. Nanotechnol., vol. 2, pp. 175-180, 2003.
15. D. Frank, Y. Taur, and H.-S. P. Wong, "Generalized scaling length for two-dimensional effects in MOSFETs," IEEE Electron Device Lett., vol. 10, pp. 385-387, 1998.