Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 24, 2000, Pages 16736-16742

  Picozzi, S ^a   Continenza, A ^a   Satta, G ^b   Massidda, S ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001583671     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.16736     Document Type: Article

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