Large on-off ratios and negative differential resistance in a molecular electronic device

Science

Volumn 286, Issue 5444, 1999, Pages 1550-1552

  Chen, J ^a   Reed, M A ^a   Rawlett, A M ^b   Tour, J M ^b  

^a YALE UNIVERSITY   (United States)

^b RICE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM DERIVATIVE; SILICON DERIVATIVE; TETRAHYDROFURAN; THIOPHENOL DERIVATIVE;

ARTICLE; CHEMICAL STRUCTURE; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; ELECTRON TRANSPORT; ELECTRONICS; PRIORITY JOURNAL;

EID: 0033584805     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.286.5444.1550     Document Type: Article

References (24)

1. A. Aviram and M. Ratner, Eds., Molecular Electronics: Science and Technology (Annals of the New York Academy of Sciences, New York, 1998).
2. M. C. Petty, M. R. Bryce, D. Bloor, Eds., An Introduction to Molecular Electronics (Oxford Univ. Press, New York, 1995).
3. L. A. Bumm et al., Science 271, 1705 (1996).
4. C. Zhou et al., Appl. Phys. Lett. 71, 611 (1997).
5. M. A. Reed et al., Science 278, 252 (1997).
6. C. Kergueris et al., Phys. Rev. B 59, 12505 (1999).
7. Device-to-device current fluctuations can be attributed to fluctuations in pore diameter size.
8. The starting compound (1a) was prepared by sequential Pd/Cu-catalyzed coupling of 2,5-dibromo-4-nitroacetanilide with phenylacetylene and 4-ethynyl-(thioacetyl)benzene.
9. J. M. Tour et al., J. Am. Chem. Soc. 117, 9529 (1995).
10. C. Zhou, thesis, Yale University (1999).
11. Weak room-temperature NDR has previously been reported [M. A. Reed, Proc. IEEE 87, 652 (1999)].
12. J. H. Smet, T. P. E. Broekaert, C. G. Fonstad, J. Appl. Phys. 71, 2475 (1992).
13. J. R. Söderström, D. H. Chow, T. C. McGill, J. Appl. Phys. 66, 5106 (1989).
14. J. Day et al., J. Appl. Phys. 73, 1542 (1993).
15. H. H. Tsai et al., IEEE Electron. Device Lett. 15, 357 (1993).
16. The case where Z = SH was avoided because of anomalies that could be caused through electrochemical disulfide formation and cleavage events.
17. Since submission of the manuscript, room-temperature NDR (PVR = 1.5:1) has been observed in a similar molecule.
18. M. R. Deshpande et al., Phys. Rev. Lett. 76, 1328 (1996).
19. E. R. Brown et al., Appl. Phys. Lett. 58, 229 (1991).
20. R. H. Mathews et al., Proc. IEEE 87, 596 (1999).
21. T. P. E. Broekaert et al., IEEE J. Solid State Circ. 33, 1342 (1998).
22. C. Seabaugh and M. A. Reed, in Heterostructures and Quantum Devices, N. G. Einspruch and W. R. Frensley, Eds. (Academic Press, Orlando, FL, 1994), pp. 351-383.
23. J. Huber et al., IEEE Trans. Electron. Devices 44, 2149 (1997).
24. Supported by the Defense Advanced Research Projects Agency through the Office of Naval Research under grant N00014-99-1-0405.