Engineered Schottky barriers on n-In0.35Ga0.65As

Materials Science and Engineering: B

Volumn 80, Issue 1-3, 2001, Pages 248-251

  Horvath Zs J ^a,b   Van Tuyen, Vo ^a   Franchi, S ^c   Bosacchi, A ^c   Frigeri, P ^c   Gombia, E ^c   Mosca, R ^c   Pal, D ^c   Kalmar I ^b   Szentpali B ^a  

^a INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^b Institute for Microelectronics and Technology   (Hungary)

^c Parco Area Delle Scienze 37 A   (Italy)

Author keywords

Barrier height engineering; Computer simulation; InGaAs; Schottky barriers

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BARRIER HEIGHT ENGINEERING;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0035932232     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00616-4     Document Type: Article

References (8)