Mechanisms for the reduction of the Schottky barrier heights of high-quality nonalloyed Pt contacts on surface-treated p-GaN

Journal of Applied Physics

Volumn 88, Issue 5, 2000, Pages 3064-3066

  Jang, ja Soon ^a   Seong, Tae Yeon ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHEMICAL BONDS; CORE LEVELS; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; III-V SEMICONDUCTORS; PLATINUM; SCHOTTKY BARRIER DIODES; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

BUFFERED OXIDE ETCH; CHEMICAL BONDINGS; COMBINED EFFECT; CORE-LEVEL PEAKS; CURRENT-VOLTAGE MEASUREMENTS; EFFECTIVE REMOVALS; SCHOTTKY BARRIER HEIGHTS; VALENCE BAND EDGES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 85024796826     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.1287236     Document Type: Letter

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