Interplay of native point defects with ZnO Schottky barriers and doping

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 5, 2012, Pages

  Brillson, Leonard J ^a   Dong, Yufeng ^a   Tuomisto, Filip ^b   Svensson, Bengt G ^c   Kuznetsov, Andrei Yu ^c   Doutt, Daniel ^d   Mosbacker, H Lee ^d   Cantwell, Gene ^e   Zhang, Jizhi ^e   Song, Jin Joo ^e   Fang, Z Q ^f   Look, David C ^f,g  

^a The Ohio State University   (United States)

^b AALTO UNIVERSITY   (Finland)

^c UNIVERSITY OF OSLO   (Norway)

^d OHIO STATE UNIVERSITY   (United States)

^e ZN Technology Inc   (United States)

^f WRIGHT STATE UNIVERSITY   (United States)

^g AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL FILMS; INTERFACES (MATERIALS); NANOTECHNOLOGY; POINT DEFECTS; SCHOTTKY BARRIER DIODES; SURFACE DEFECTS; ZINC OXIDE;

ANNEALING METHODS; CATHODOLUMINESCENCE SPECTROSCOPY; CHARGED CARRIERS; DEEP LEVEL EMISSION; DEFECT COMPLEX; DEPTH-RESOLVED; ELECTRONIC DEFECTS; FREE CARRIER CONCENTRATION; METAL CONTACTS; METAL INTERFACE; NANO SCALE; NANOSCALE PRECISION; NATIVE DEFECT; ORDERS OF MAGNITUDE; SCHOTTKY BARRIERS; SEMI-CONDUCTOR SURFACES; SPACE CHARGE REGIONS; SURFACE NANOSTRUCTURE; SURFACES AND INTERFACES; TRANSITION ENERGY; ZNO; ZNO SURFACE;

SEMICONDUCTOR DOPING;

EID: 84866512068     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4732531     Document Type: Review

References (69)

1. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Prog. Mater. Sci. 50, 293 (2005). 10.1016/j.pmatsci.2004.04.001
2. D. C. Look, Mater. Sci. Eng., B 80, 383 (2001). 10.1016/S0921-5107(00) 00604-8
3. M. Grundmann, H. Frenzel, A. Lajn, M. Lorenz, F. Schein, and H. von Wenckstern, Phys. Status Solidi A 207, 1437 (2010). 10.1002/pssa.200983771
4. Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005). 10.1063/1.1992666
5. M. D. McCluskey and S. J. Jokela, J. Appl. Phys. 106, 071101 (2009). 10.1063/1.3216464
6. B. K. Meyer, Phys. Status Solidi B 241, 231-170 (2004); 10.1002/pssb.200301962
7. B. K. Meyer, D. M. Hofmann, J. Stehr, and A. Hoffmann, in Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, edited by, C. W. Litton, D. C. Reynolds, and, T. C. Collin, (Wiley, Chichester, UK., 2011), Chap., pp. 135-170.
8. L. J. Brillson and Y. Lu, J. Appl. Phys. 109, 121301 (2011). 10.1063/1.3581173
9. L. J. Brillson, in Zinc Oxide Materials for Electronic and Optoelectronic Device Applications, edited by, C. W. Litton, D. C. Reynolds, and, T. C. Collin, (Wiley, Chichester, UK., 2011), Chap., pp. 87-112.
10. L. J. Brillson, in Surfaces and Interfaces of Electronic Materials (Wiley-VCH, Weinheim, 2010), Chap., pp. 447-522.
11. G. Heiland, Surf. Sci. 13, 72 (1969). 10.1016/0039-6028(69)90237-4
12. M. W. Allen, S. M. Durbin, and J. B. Metson, Appl. Phys. Lett. 91, 053512 (2007). 10.1063/1.2768028
13. B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices, 6th ed. (Pearson Prentice-Hall, Upper Saddle River, NJ, 2006), pp. 221-223.
14. A. Schenk and U. Krumbein, J. Appl. Phys. 78, 3185 (1995). 10.1063/1.360007
15. A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, Phys. Rev. 121, 684 (1961). 10.1103/PhysRev.121.684
16. T. Yajima and L. Esaki, J. Phys. Soc. Jpn. 13, 1281 (1958). 10.1143/JPSJ.13.1281
17. O. Breitenstein, P. Altermatt, K. Ramspeck, and A. Schenk, Proceedings of the 21st European Photovoltaic Solar Energy Conference, 4-8 September 2006, Dresden, Germany (WIP, Munich, 2006), pp. 625-628.
18. M. W. Allen, M. M. Alkaisi, and S. M. Durbin, Appl. Phys. Lett. 89, 103520 (2006). 10.1063/1.2346137
19. K. Hong and J.-L. Lee, Electrochem. Solid-State Lett. 11, H29 (2007). 10.1149/1.2817479
20. H. Von Wenckstern, G. Biehne, R. A. Rahman, H. Hochmuth, M. Lorenz, and M. Grundmann, Appl. Phys. Lett. 88, 092102 (2006). 10.1063/1.2180445
21. C. A. Mead, Solid-State Electron. 9, 1023 (1966). 10.1016/0038-1101(66) 90126-2
22. L. J. Brillson, Phys. Rev. B 18, 2431 (1978). 10.1103/PhysRevB.18.2431
23. L. J. Brillson, Phys. Rev. Lett. 40, 260 (1978). 10.1103/PhysRevLett.40. 260
24. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, Superlattices Microstruct. 34, 3 (2003). 10.1016/S0749-6036(03)00093-4
25. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. (Wiley-Interscience, New York, 2007), Chap..
26. F. A. Padovani and R. Stratton, Solid-State Electron. 9, 695 (1966). 10.1016/0038-1101(66)90097-9
27. L. J. Brillson, J. Vac. Sci. Technol. B 19, 1762 (2001). 10.1116/1.1394728
28. L. J. Brillson, H. L. Mosbacker, D. Doutt, M. Kramer, Z. L. Fang, D. C. Look, G. Cantwell, J. Zhang, and J. J. Song, Superlattices Microstruct. 45, 206 (2009); 10.1016/j.spmi.2008.11.008
29. L. J. Brillson, Y. Dong, D. Doutt, D. C. Look, and Z.-Q. Fang, Physica B 404, 4768 (2009); 10.1016/j.physb.2009.08.151
30. D. Doutt, H. L. Mosbacker, G. Cantwell, J. Zhang, J. J. Song, and L. J. Brillson, Appl. Phys. Lett. 94, 042111 (2009). 10.1063/1.3077015
31. L. J. Brillson, in Surfaces and Interfaces of Electronic Materials (Wiley-VCH, Weinheim, 2010), Chap., pp. 279-304.
32. P. Hovington, D. Drouin, and R. Gauvin, Scanning 19, 1 (1997). 10.1002/sca.4950190101
33. Y. Dong, F. Tuomisto, B. G. Svensson, A. Yu. Kuznetsov, and L. J. Brillson, Phys. Rev. B 81, 081201 (2010). 10.1103/PhysRevB.81.081201
34. F. Tuomisto, in Springer Handbook of Crystal Growth, Defects and Characterization, edited by, G. Dhanaraj, K. Byrappa, V. Prasad, and, M. Dudley, (Springer, New York, 2010).
35. R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors (Springer, New York, 1999).
36. D. C. Look, K. D. Leedy, L. Vines, B. G. Svensson, A. Zubiaga, F. Tuomisto, D. R. Doutt, and L. J. Brillson, Phys. Rev. B 84, 115202 (2011). 10.1103/PhysRevB.84.115202
37. D. C. Look, K. D. Leedy, D. H. Tomich, and B. Bayraktaroglu, Appl. Phys. Lett. 96, 062102 (2010). 10.1063/1.3310043
38. H. L. Mosbacker, Y. M. Strzhemechny, B. D. White, P. E. Smith, D. C. Look, D. C. Reynolds, C. W. Litton, and L. J. Brillson, Appl. Phys. Lett. 87, 012102 (2005). 10.1063/1.1984089
39. L. J. Brillson, H. L. Mosbacker, M. J. Hetzer, Y. Strzhemechny, G. H. Jessen, D. C. Look, G. Cantwell, J. Zhang, and J. J. Song, Appl. Phys. Lett. 90, 102116 (2007). 10.1063/1.2711536
40. Y. Dong, Z.-Q. Fang, D. C. Look, G. Cantwell, J. Zhang, J. J. Song, and L. J. Brillson, Appl. Phys. Lett. 93, 072111 (2008). 10.1063/1.2974983
41. Y. Dong, Z.-Q. Fang, D. C. Look, D. R. Doutt, G. Cantwell, J. Zhang, J. J. Song, and L. J. Brillson, J. Appl. Phys. 108, 103718 (2010). 10.1063/1.3514102
42. Y. Dong, Z.-Q. Fang, D. C. Look, D. R. Doutt, M. J. Hetzer, and L. J. Brillson, J. Vac. Sci. Technol. B 27, 1710 (2009). 10.1116/1.3119681
43. Z.-Q. Fang, B. Claflin, D. C. Look, Y.-F. Dong, and L. J. Brillson, J. Vac. Sci. Technol. B 27, 1774 (2009); 10.1116/1.3095814
44. Z.-Q. Fang, B. Claflin, D. C. Look, Y.-F. Dong, H. L. Mosbacker and L. J. Brillson, J. Appl. Phys. 104, 063707 (2008). 10.1063/1.2978374
45. A. Hierro, S. A. Ringel, M. A. Hansen, U. Mishra, S. Denbaars, and J. Speck, Appl. Phys. Lett. 76, 3064 (2000). 10.1063/1.126580
46. L. J. Brillson, Surf. Sci. 51, 45 (1975). 10.1016/0039-6028(75)90233-2
47. T. A. Merz, D. R. Doutt, T. Bolton, Y. Dong, and L. J. Brillson, Surf. Sci. Lett. 605, L20 (2011). 10.1016/j.susc.2010.12.021
48. A. F. Kohan, G. Ceder, D. Morgan, and C. Van de Walle, Phys. Rev. B 61, 15019 (2000). 10.1103/PhysRevB.61.15019
49. F. Oba, A. Togo, Isao Tanaka, Joachim Paier, and Georg Kresse, Phys. Rev. B 77, 245202 (2008). 10.1103/PhysRevB.77.245202
50. H. L. Mosbacker, J. Vac. Sci. Technol. B 24, 1405 (2007). 10.1116/1.2756543
51. U. Grossner, S. Gabrielsen, T. M. Borseth, J. Grillenberger, A. Yu. Kuznetsov, and B. G. Svensson, Appl. Phys. Lett. 85, 2259 (2004). 10.1063/1.1790592
52. M. Hansen, Constitution of Binary Alloys (McGraw-Hill, New York, 1958), p. 642.
53. Y. M. Strzhemechny, Appl. Phys. Lett. 84, 2545 (2004). 10.1063/1.1695440
54. A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, Jpn. J. Appl. Phys., Part 2 44, L643 (2005). 10.1143/JJAP.44.L643
55. S. J. Jiao, Appl. Phys. Lett. 88, 031911 (2006). 10.1063/1.2166686
56. J. B. Kim, D. Byun, S. Y. Ie, D. H. Park, W. K. Choi, Ji.-W. Choi, and B. Angadi, Semicond. Sci. Technol. 23, 095004 (2008). 10.1088/0268-1242/23/9/ 095004
57. S. Chu, Nat. Nanotechnol. 6, 506 (2011). 10.1038/nnano.2011.97
58. T. Moe Borseth, F. Tuomisto, J. S. Christensen, W. Skorupa, E. V. Monakhov, B. G. Svensson, and A. Yu. Kuznetsov, Phys. Rev. B 74, 161202 (2006). 10.1103/PhysRevB.74.161202
59. T. Moe Borseth, F. Tuomisto, J. S. Christensen, W. Skorupa, E. V. Monakhov, B. G. Svensson, and A. Yu. Kuznetsov, Phys. Rev. B 77, 045204 (2008). 10.1103/PhysRevB.77.045204
60. K. Vanheusden, C. H. Seager, W. L. Warren, D. R. Tallant, and J. A. Voigt, Appl. Phys. Lett. 68, 403 (1996). 10.1063/1.116699
61. S. B. Zhang, S.-H. Wei, and Alex Zunger, Phys. Rev. B 63, 075205 (2001). 10.1103/PhysRevB.63.075205
62. A. Janotti and C. G. Van de Walle, Phys. Rev. B 76, 165202 (2007). 10.1103/PhysRevB.76.165202
63. D. R. Doutt, L. Isabella, K. D. Leedy, and D.C. Look, Impact of native point defects and Ga diffusion on electronic droperties of degenerate Ga-doped ZnO., Appl. Phys. Lett. (submitted).
64. D. C. Look, T. C. Droubay, J. S. McCloy, Z. Zhu, and S. A. Chambers, J. Vac. Sci. Technol. A 29, 03A102 (2011). 10.1116/1.3523296
65. R. C. Scott, K. D. Leedy, B. Bayraktaroglu, D. C. Look, and Y.-H. Zhang, Appl. Phys. Lett. 97, 072113 (2010). 10.1063/1.3481372
66. A. Walsh, J. L. F. Da Silva, and S.-H. Wei, Phys. Rev. B 78, 075211 (2008). 10.1103/PhysRevB.78.075211
67. Z. Zhang, T. Merz, K.-E. Knutsen, A. Yu. Kuznetsov, B. G. Svensson, and L. J. Brillson, Appl. Phys. Lett. 100, 042107 (2012). 10.1063/1.3679708
68. S. Lany and A. Zunger, Appl. Phys. Lett. 96, 142114 (2010). 10.1063/1.3383236
69. B. K. Meyer, J. Stehr, A. Hofstaetter, N. Volbers, A. Zeuner, and J. Sann, Appl. Phys. A: Mater. Sci. Process. 88, 119 (2007). 10.1007/s00339-007- 3962-4