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Volumn 158, Issue 4, 2011, Pages

Mechanisms of schottky barrier control on n-type germanium using Ge 3N4 interlayers

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; BARRIER HEIGHTS; CAPACITANCE VOLTAGE MEASUREMENTS; FERMI-LEVEL UNPINNING; INTERFACE STATE; LINEAR DEPENDENCE; LOW TEMPERATURES; LOW THERMAL BUDGET; METAL WORK FUNCTION; N-TYPE GE; OHMIC BEHAVIOR; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS;

EID: 79955131397     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3545703     Document Type: Article
Times cited : (47)

References (23)
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  • 15
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    • The accuracy of schottky-barrier-height measurements on clean-cleaved silicon
    • DOI 10.1063/1.324650
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    • Van Otterloo, J.D.1    Gerritsen, L.J.2
  • 18
    • 0023291259 scopus 로고
    • Orientation dependent surface dipole and fermi-level position on a clean Ge cylinder
    • DOI 10.1016/0038-1098(87)90298-5
    • H. J. Kuhr and W. Ranke, Solid State Commun., 61, 285 (1987). 10.1016/0038-1098(87)90298-5 (Pubitemid 18592957)
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    • Kuhr, H.J.1    Ranke, W.2
  • 19
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    • Intrinsic limitations to the doping of wide-gap semiconductors
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    • W. Walukiewicz, Physica B, 302-303, 123 (2001). 10.1016/S0921-4526(01) 00417-3 (Pubitemid 32551292)
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    • Walukiewicz, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.