Ab initio calculations of the β-SiC(001)/Ti interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 4, 2000, Pages 2672-2679

  Kohyama, M ^a   Hoekstra, J ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001061183     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.2672     Document Type: Article

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