Schottky barrier height modification in Au/n-type 6H-SiC structures by PbS interfacial layer

Microelectronic Engineering

Volumn 88, Issue 2, 2011, Pages 179-182

  Gulen Y ^a   Ejderha, K ^b   Nuholu, C ^a   Turut, A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

^b BINGOL UNIVERSITY   (Turkey)

Author keywords

PbS; Schottky barrier modification; Silicon carbide; XRD

Indexed keywords

BH REDUCTION; CAPACITANCE VOLTAGE CHARACTERISTIC; FORWARD BIAS; INTERFACE CHARGE; INTERFACE LAYER; INTERFACE STATE; INTERFACE STATE CHARGE; INTERFACIAL LAYER; PBS; REFERENCE DIODES; REVERSE BIAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SCHOTTKY DIODES; SEMICONDUCTOR CONTACTS; SIC SCHOTTKY DIODE; SPACE CHARGE DENSITY; SPACE CHARGE REGIONS; SPACE CHARGES; STRUCTURAL FORMATION; THIN LAYERS; XRD;

BIAS VOLTAGE; CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON CARBIDE; VACUUM EVAPORATION; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650029649     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2010.10.009     Document Type: Article

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