Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces

Applied Surface Science

Volumn 284, Issue , 2013, Pages 720-725

  Li, Yang ^a   Long, Wei ^a   Tung, Raymond T ^a  

^a CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

Electronic transport; Schottky barrier height; Surfaces and interfaces

Indexed keywords

ADSORBATES; CHARGE TRANSFER; SCATTERING PARAMETERS; SCHOTTKY BARRIER DIODES; SILICON; SILICON COMPOUNDS; SILVER COMPOUNDS;

ELECTRICAL CHARACTERISTIC; ELECTRONIC TRANSPORT; INTERFACE BEHAVIOR; INTERFACE CHARGE; METAL INTERACTIONS; SCHOTTKY BARRIER HEIGHTS; SILICON SURFACES; SURFACES AND INTERFACES;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84883873863     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.07.162     Document Type: Article

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