Schottky barrier heights at polar metal/semiconductor interfaces

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 8, 2003, Pages

  Berthod, C ^a   Binggeli, N ^b   Baldereschi, A ^c  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

^c INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ALUMINUM DERIVATIVE; ANION; ARSENIC DERIVATIVE; CATION; GALLIUM ARSENIDE; GERMANIUM; METAL; SELENIUM DERIVATIVE; ZINC DERIVATIVE;

AB INITIO CALCULATION; ACCURACY; ARTICLE; CHEMICAL COMPOSITION; CHEMICAL INTERACTION; CHEMICAL STRUCTURE; DECOMPOSITION; ELECTRIC POTENTIAL; ENERGY; PHYSICOCHEMICAL MODEL; SEMICONDUCTOR; SURFACE PROPERTY; TECHNIQUE; THEORY;

EID: 0141676346     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.085323     Document Type: Article

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