SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 5, 2008, Pages 0514061-0514063

A significant shift of schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film

(3) Nishimura, Tomonori a Kita, Koji a Toriumi, Akira a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FERMI LEVEL; FERMIONS; GERMANIUM; INSULATING MATERIALS; METALS; MOS DEVICES; MOSFET DEVICES; OXIDE FILMS; PLASTIC FILMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR METAL BOUNDARIES;

GAP STATES; GRADUAL CHANGES; IMPURITY DOPING; INSULATING FILMS; METAL SOURCE/DRAIN; MOS FETS; OHMIC CHARACTERISTICS; PEAK MOBILITIES; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY JUNCTIONS; SEMICONDUCTOR FIELD EFFECTS; THIN INSULATING FILMS; THIN OXIDE FILMS; VALENCE BAND EDGES;

FIELD EFFECT TRANSISTORS;

EID: 57049138332 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.1.051406 Document Type: Article

Times cited : (134)

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