Contacting organic molecules by metal evaporation

Physical Chemistry Chemical Physics

Volumn 6, Issue 19, 2004, Pages 4538-4541

  Haick, Hossam ^a   Ambrico, Marianna ^b,c   Ghabboun, Jamal ^a   Ligonzo, Teresa ^c   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b CNR   (Italy)

^c UNIVERSITY OF BARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; FUNCTIONAL GROUP; GALLIUM; PALLADIUM;

ARTICLE; CORRELATION ANALYSIS; ELECTROCHEMICAL ANALYSIS; ELECTRON BEAM; EVAPORATION; HIGH TEMPERATURE PROCEDURES; METAL BINDING; MOLECULAR MODEL; ORGANIC CHEMISTRY; REPRODUCIBILITY;

EID: 8344275249     PISSN: 14639076     EISSN: None     Source Type: Journal    
DOI: 10.1039/b411490f     Document Type: Article

References (30)

1. A. Ulman, Chem. Rev., 1996, 96, 1533-1544.
2. E. E. Polymeropoulos and J. Sagiv, J. Chem. Phys., 1978, 69, 1836-1847.
3. A. Vilan and D. Cahen, Adv. Funct. Mater., 2002, 12, 795-807.
4. S. Hrapovic, Y. Liu, G. Enright, F. Bensebaa and J. H. T. Luong, Langmuir, 2003, 19(9), 3958-3965.
5. J. W. P. Hsu, Y. L. Loo, D. V. Lang and J. A. Rogers, J. Vac. Sci. Technol. B, 2003, 21(4), 1928-1935.
6. Y.-J. Liu and H.-Z. Yu, ChemPhysChem, 2002, 9, 799-802.
7. J. G. Kushmerick, D. B. Holt, J. C. Yang, J. Naciri, M. H. Moore and R. Shashidhar, Phys. Rev. Lett., 2002, 89(8), 86802.
8. W. A. Hofer, A. J. Fisher, G. P. Lopinski and R. A. Wolkow, Surf. Sci., 2001, 482-485, 1181-1185.
9. J. Wei, H. Liu, A. R. Dick, H. Yamamoto, Y. He and D. H. Waldeck. J. Am. Chem. Soc., 2002, 124(32), 9591-9599.
10. M. A. Rampi and G. M. Whitesides, Chem. Phys., 2002, 281, 373-391.
11. D. V. Lioubtchenko, I. A. Markov and T. A. Briantserva, Appl. Surf. Sci., 2003, 211, 335-340.
12. T. Ohgi. H.-Y. Sheng, Z.-C. Dong and H. Nejoh, Surf. Sci., 1999, 442, 277-282.
13. H. A. Zahl and M. J. E. Golay, Rev. Sci. Inst., 1946, 17(11), 511-515.
14. N. Okazaki and J. R. Sambles, Int. Symp. Org. Mol. Electron., Nagoya, Japan, 2000.
15. T. Xuo, I. R. Peterson, M. V. Lakshmikantham and R. M. Metzger, Angew. Chem., Int. Ed. Engl., 2001, 40(9), 1749-1752.
16. B. de Boer, M. M. Frank, Y. J. Chabal, W. Jiang, E. Garfunkel and Z. Bao, Langmuir, 2004, 20, 1539-1542.
17. S. G. Ray and R. Naaman, Chem. Phys. Lett., 2001, 341, 51-55.
18. R. Cohen, L. Kronik, A. Shanzer, D. Cahen, A. Liu, Y. Rosenwaks, K. K. Lorenz and A. B. Ellis. J. Am. Chem. Soc., 1999, 121(45), 10545-10553.
19. R. Cohen, S. Bastide, D. Cahen, J. Libman, A. Shanzer and Y. Rosenwaks, Adv. Mater., 1997, 9, 746-749.
20. S.-C. Chang, Z. Li, C. N. Lau, B. Larade and R. S. Williams, Appl. Phys. Lett., 2003, 83(15), 3198-3200.
21. Y. Guan, M. A. Matin and T. M. Stephen, Electron. Lett., 2002. 38(15), 826-827.
22. H. Haick, M. Ambrico, T. Ligonzo and D. Cahen, submitted.
23. L, instead of, e.g. molecular dipole moment, allows direct comparisons between surfaces, also if small differences in molecule coverage occur.
24. The high leakage currents indicate that direct evaporation damages the GaAs surface per se. Apart from the metal atoms/ clusters, the e-beam also induces X-radiation, which, together with stray electrons from the e-beam source and electrons back-scattered from the molten metal target, can reach the substrate (cf. ref. 11). All these radiations can lead to changes in the GaAs surface composition, which can affect current flow through the junctions.
25. R. Tung, Mater. Sci. Eng., R. 2002, 35, 1-138.
26. Complementary capacitance-voltage (C-V) experiments show that contacts made by indirect evaporation have effective areas comparable to the geometrical ones, whereas those made by "fast" lift-off, float-on have effective areas that are at least one order of magnitude less than the geometric ones. See A. Vilan, Ph.D Thesis, Weizmann Institute of Science, Rehovot, 2002.
27. J. L. Freeouf, T. N. Jackson, S. E. Laux and J. M. Woodall, J. Vac. Sci. Technol., 1982, 21(2), 570-573.
28. H.-Z. Yu, S. Morin, D. M. D. Wayner, Ph. Allongue and C. H. de Villeneuve, J. Phys. Chem. B, 2000, 104, 11157-11161.
29. H. G. Kjaergaard, K. J. Bezar and K. A. Brooking, Mol. Phys., 1999, 96(7), 1125-1138.
30. Adsorption of residues at the interface results in a less-organized, thinner molecular film, with a higher percentage of pinholes, on the average, than what is the case for intact molecules. Such adsorption increases the percentage of short circuits, relative to that of junctions without damaged molecules.