Evolution mechanism of nearly pinning-free platinum/n-type indium phosphide interface with a high Schottky barrier height by in situ electrochemical process

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1227-1235

  Hasegawa, Hideki ^a   Sato, Taketomo ^a   Hashizume, Tamotsu ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 5844241259     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589443     Document Type: Article

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