Ideal Ohmic contact to n-type 6H-SiC by reduction of Schottky barrier height

Applied Physics Letters

Volumn 71, Issue 5, 1997, Pages 689-691

  Teraji, T ^a   Hara, S ^a   Okushi, H ^a   Kajimura, K ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC DENSITY OF STATES; ETCHING; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON CARBIDE; SURFACES; TITANIUM;

HIGH TEMPERATURE ANNEALING; SCHOTTKY BARRIER HEIGHT;

OHMIC CONTACTS;

EID: 0031552823     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119831     Document Type: Article

References (27)