Band structure of-type GaAs with a strained Si interfacial layer

Physical Review B - Condensed Matter and Materials Physics

Volumn 53, Issue 7, 1996, Pages 3879-3884

  Chen, Z ^a   Mohammad, S ^a   Morkoc H ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013326572     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.53.3879     Document Type: Article

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