Schottky barrier tuning at Al/GaAs(100) junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 3000-3007

  Berthod, C ^a   Bardi, J ^a   Binggeli, N ^a   Baldereschi, A ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000884016     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588949     Document Type: Article

References (24)

1. L. J. Brillson, in Handbook on Semiconductors, edited by P. T. Landsberg (North-Holland, Amsterdam, 1992), Vol. 1, p. 281;
2. in Contacts to Semiconductors, edited by L. J. Brillson (Noyes, Park Ridge, NJ, 1993).
3. W. Spicer, Semiconductors Semimetals 38, 449 (1993).
4. J. M. Woodall and J. L. Freeouf, J. Vac. Sci. Technol. 21, 574 (1982).
5. V. Heine, Phys. Rev. 138, A1689 (1965).
6. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
7. F. Flores and C. Tejedor, J. Phys. C 20, 145 (1987).
8. S. G. Louie, J. R. Chelikowsky, and M. L. Cohen, Phys. Rev. B 15, 2154 (1977).
9. W. Mönch, Phys. Rev. Lett. 58, 1260 (1987).
10. M. Missous, W. S. Truscott, and K. E. Singer, J. Appl. Phys. 68, 2239 (1990).
11. P. Revva, J. M. Langer, M. Missous, and A. R. Peaker, J. Appl. Phys. 74, 416 (1993).
12. M. van Schilfgaarde, E. R. Weber, and N. Newman, Phys. Rev. Lett. 73, 581 (1994).
13. R. G. Dandrea and C. B. Duke, J. Vac. Sci. Technol. A 11, 848 (1993);
14. R. G. Dandrea and C. B. Duke, J. Vac. Sci. Technol. B 11, 1553 (1993).
15. J. C. Costa, F. Williamson, T. J. Miller, K. Beyzavi, M. I. Nathan, D. S. L. Mui, S. Strite, and H. Morkoç, Appl. Phys. Lett. 58, 382 (1991), and references therein.
16. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 52, 1794 (1988).
17. M. Cantile, L. Sorba, S. Yildirim, P. Faraci, G. Biasiol, and A. Franciosi, Appl. Phys. Lett. 64, 988 (1994);
18. M. Cantile, L. Sorba, P. Faraci, S. Yildirim, G. Biasiol, G. Bratina, A. Franciosi, T. J. Miller, M. I. Nathan, and L. Tapfer, J. Vac. Sci. Technol. B 12, 2653 (1994).
19. S. Baroni, R. Resta, A. Baldereschi, and M. Peressi, in Spectroscopy of Semiconductor Microstructures, edited by G. Fasol, A. Fasolino, and P. Lugli, NATO ASI Series B (Plenum, New York, 1989), Vol. 206, p. 251.
20. W. A. Harrison, J. Vac. Sci. Technol. 16, 1492 (1979).
21. M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Phys. Rev. B 43, 7347 (1991).
22. G. Biasiol, L. Sorba, G. Bratina, R. Nicolini, A. Franciosi, M. Peressi, S. Baroni, R. Resta, and A. Baldereschi, Phys. Rev. Lett. 69, 1283 (1992).
23. J. Ihm, A. Zunger, and M. L. Cohen, J. Phys. C 12, 4409 (1979);
24. J. Ihm, A. Zunger, and M. L. Cohen, J. Phys. C 13, 3095 (1980).