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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 4, 2011, Pages

Schottky-barrier height modulation of metal/In 0.53Ga 0.47 As interfaces by insertion of atomic-layer deposited ultrathin Al2 O3

(4) Wang, Runsheng a,b Xu, Min a Ye, Peide D a Huang, Ru b

a Purdue University (United States)

b PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; FIELD EFFECT TRANSISTORS; MODULATION; SEMICONDUCTING INDIUM;

AS INTERFACES; BARRIER SHIFTS; ELECTRIC DIPOLE; FUTURE APPLICATIONS; METAL SOURCE/DRAIN; METAL-OXIDE; METAL/SEMICONDUCTOR INTERFACE; P-TYPE; SCHOTTKY BARRIERS; SCHOTTKY-BARRIER HEIGHTS; ULTRA-THIN; ULTRATHIN INSULATORS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 80051866822 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3610972 Document Type: Article

Times cited : (25)

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