Improvement of the ohmic characteristics of Pd contacts to p-type GaN using an Ag interlayer

Semiconductor Science and Technology

Volumn 21, Issue 2, 2006, Pages

  Song, June O ^a   Kwak, J S ^b   Seong, Tae Yeon ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Sunchon National University   (South Korea)

^c Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADHESION; ANNEALING; GALLIUM NITRIDE; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SURFACE CHEMISTRY;

AG INTERLAYERS; OHMIC FORMATION; P-TYPE GAN; PD CONTACTS;

PALLADIUM;

EID: 30744476756     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/2/L01     Document Type: Article

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