Controlling Au/n-GaAs junctions by partial molecular monolayers

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 14, 2006, Pages 3438-3451

  Haick, Hossam ^a,b   Pelz, Jonathan P ^c   Ligonzo, Teresa ^d   Ambrico, Marianna ^e   Cahen, David ^a   Wei, Cai ^c   Marginean, Camelia ^c   Tivarus, Cristian ^c   Tung, Raymond T ^f  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^c OHIO STATE UNIVERSITY   (United States)

^d UNIVERSITY OF BARI   (Italy)

^e CNR   (Italy)

^f CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC ELECTRON EMISSION MICROSCOPY (BEEM); ELECTRONIC TRANSPORT; MOLECULAR LAYERS;

ELECTROSTATICS; EMBEDDED SYSTEMS; INTERFACES (MATERIALS); MONOLAYERS; TUNING;

SEMICONDUCTOR JUNCTIONS;

EID: 33847346328     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200622381     Document Type: Article

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