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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 1, 2002, Pages 10-13

Barrier height enhancement in the Au/n-GaAs Schottky diodes with anodization process

(3) Biber, M a Temirci, C a Turut A a

a ATATÜRK UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; GOLD; PERMITTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE TREATMENT;

SEMICONDUCTOR ELECTRON AFFINITY;

SCHOTTKY BARRIER DIODES;

EID: 0036123544 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1426369 Document Type: Article

Times cited : (32)

References (24)

1
- 0011715992
- (1971) J. Phys. D , vol.4 , pp. 1589
- Card, H.C.¹ Rhoderick, E.H.²

2
- 0031620444
- (1998) Solid-State Electron. , vol.42 , pp. 23
- Ebeoǧlu, M.A.¹ Temurta, F.T.² Öztürk, Z.Z.³

3
- 0024106331
- (1988) Appl. Phys. A: Solids Surf. , vol.47 , pp. 291
- Werner, J.H.¹

4
- 0031187742
- (1997) Appl. Phys. A: Mater. Sci. , vol.65 , pp. 33
- Saǧlam, M.¹ Türüt, A.² Nuhoǧlu, Ç.³ Efeoǧlu, H.⁴ Kiliçoǧlu, T.⁵ Ebeoǧlu, M.A.⁶

5
- 0006315251
- edited by I. P. Batra (Plenum, New York)
- (1989) Metallization and Metal-Semiconductor Interfaces , vol.195 , pp. 11-35
- Mönch, W.¹

6
- 0000263567
- (1996) Phys. Scr. , vol.53 , pp. 118
- Türüt, A.¹ Batt, B.² Kökçe, A.³ Saǧlam, M.⁴ Yalçin, N.⁵

7
- 0033173898
- (1999) Solid-State Electron. , vol.43 , pp. 1571
- Sugimura, T.¹ Tsuzuku, T.² Katsui, T.³ Kasai, Y.⁴ Inokuma, T.⁵ Hashimato, S.⁶ Iiyama, K.⁷ Takamiya, S.⁸

8
- 0033736856
- (2000) Solid-State Electron. , vol.44 , pp. 1089
- Hudait, M.K.¹ Krupanidhi, S.B.²

9
- 0003479975
- edited by C. W. Wilmsen (Plenum, New York)
- (1985) Physics and Chemistry of III-V Compound Semiconductor Interfaces
- Wilmsen, C.W.¹

10
- 0026882410
- (1992) Solid-State Electron. , vol.35 , pp. 835
- Türüt, A.¹ Yalçin, N.² Saǧlam, M.³

11
- 34250965271
- (1938) Naturwissenschaften , vol.26 , pp. 843
- Schottky, W.¹

12
- 84885149819
- (1938) Proc. Cambridge Philos. Soc. , vol.34 , pp. 568
- Mott, N.F.¹

13
- 36149025707
- (1947) Phys. Rev. , vol.71 , pp. 717
- Barden, J.¹

14
- 0018523693
- (1979) J. Vac. Sci. Technol. , vol.16 , pp. 1422
- Spicer, W.E.¹ Chye, P.W.² Skeath, P.R.³ Lindau, I.⁴

15
- 33646611150
- (1988) Phys. Rev. B , vol.37 , pp. 7129
- Mönch, W.¹

16
- 0022734792
- (1986) Solid-State Electron. , vol.29 , pp. 633
- Song, Y.P.¹ Van Meirhaeghe, R.L.² Laflére, W.H.³ Cardon, F.⁴

17
- 0026238340
- (1991) Solid-State Electron. , vol.34 , pp. 1077
- Mui, D.¹ Strite, S.² Morkoç, H.³

18
- 85007205247
- Wiley, New York
- (1981) Physics of Semiconductor Devices, 2nd ed.
- Sze, S.M.¹

19
- 0000035860
- (1986) Phys. Rev. B , vol.33 , pp. 1146
- Newman, N.¹ Van Schilfgarde, M.² Kendelewicz, T.³ Williams, M.D.⁴ Spicer, W.E.⁵

20
- 0033190090
- (1999) Semicond. Sci. Technol. , vol.14 , pp. 871
- Vanalme, G.M.¹ Goubert, L.² Van Meirhaeghe, R.L.³ Cordon, F.⁴ Van Daele, P.⁵

21
- 0000936827
- (1987) J. Appl. Phys. , vol.62 , pp. 4812
- Callegari, A.¹ Ralp, D.² Braslau, N.³

22
- 0006331470
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1413
- Chen, C.P.¹ Chang, Y.A.² Huang, J.W.³ Kuech, T.F.⁴

23
- 36449000058
- (1991) J. Appl. Phys. , vol.69 , pp. 1522
- Werner, J.H.¹ Güttler, H.H.²

24
- 0000499612
- (1991) J. Appl. Phys. , vol.70 , pp. 7403
- Sullivan, J.P.¹ Tung, R.T.² Pinto, M.R.³ Graham, W.R.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.