Modulation of schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1328-1331

  Wu, Zheng ^a   Huang, Wei ^a   Li, Cheng ^a   Lai, Hongkai ^a   Chen, Songyan ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Germanium; interface phenomena; Schottky barrier height (SBH)

Indexed keywords

BARRIER HEIGHTS; INTERFACE PHENOMENA; METAL LAYER; METAL-INDUCED GAP STATE; PINNING LEVEL; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY JUNCTIONS;

GERMANIUM; MODULATION; TANTALUM COMPOUNDS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84862798137     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187455     Document Type: Article

References (18)

1. T. Nishimura, K. Kita, and A. Toriumi, "Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface," Appl. Phys. Lett., vol. 91, no. 12, p. 123123, Sep. 2007.
2. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, "Fermilevel pinning and charge neutrality level in germanium," Appl. Phys. Lett., vol. 89, no. 25, p. 252110, Dec. 2006.
3. P. Broqvist, A. Alkauskas, and A. Pasquarello, "Defect levels of dangling bonds in silicon and germanium through hybrid functionals," Phys. Rev. B, vol. 78, p. 075203, Aug. 2008.
4. W. Mönch, "Barrier heights of real Schottky contacts explained by metalinduced gap states and lateral inhomogeneities," J. Vac. Sci. Technol. B, vol. 17, no. 4, pp. 1867-1876, Jul. 1999. (Pubitemid 129721038)
5. K. Ikeda, Y. Yamashita, N. Sugiyama, N. Taoka, and S. Takagi, "Modulation of NiGe/Ge Schottky barrier height by sulfur segregation during Ni germanidation," Appl. Phys. Lett., vol. 88, no. 15, p. 152115, Apr. 2006.
6. A. V. Thathachary, K. N. Bhat, N. Bhat, andM. S. Hegde, "Fermi level depinning at the germanium Schottky interface through sulfur passivation," Appl. Phys. Lett., vol. 96, no. 15, p. 152108, Apr. 2010.
7. R. R. Lieten, S. Degroote, M. Kuijk, and G. Borghs, "Ohmic contact formation on n-type Ge," Appl. Phys. Lett., vol. 92, no. 02, p. 022106, Jan. 2008.
8. Y. Zhou, M. Ogawa, X. H. Han, and K. L. Wang, "Alleviation of Fermilevel pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide," Appl. Phys. Lett., vol. 93, no. 20, p. 202105, Nov. 2008.
9. M. Kobayashi, A. Kinoshita, K. Saraswat, H.-S. P. Wong, and Y. Nishi, "Fermi-level depinning in metal/Ge Schottky junction and its application to metal source/drain Ge NMOSFET," in Symp. VLSI. Tech. Symp., Jun. 2008, pp. 54-55.
10. T. Nishimura, K. Kita, and A. Toriumi, "A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film," Appl. Phys. Express., vol. 1, p. 051406, May 2008.
11. Y. Zhou, W. Han, Y. Wang, F. X. Xiu, J. Zou, R. K. Kawakami, and K. L. Wang, "Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films," Appl. Phys. Lett., vol. 96, no. 10, p. 102103, Mar. 2010.
12. T. Nishimura, K. Kita, K. Nagashio, and A. Toriumi, "Long range pinning interaction in ultra-thin insulator-inserted metal/germanium junctions," in Silicon Nanoelectronics Workshop, Jun. 2010, p. 5562590.
13. C. S. Kang, H. J. Cho, Y. H. Kim, R. Choi, K. Onishi, A. Shahriar, and J. C. Lee, "Characterization of resistivity and work function of sputtered TaN film for gate electrode applications," J. Vac. Sci. Technol. B, vol. 21, no. 5, pp. 2026-2028, Sep. 2003.
14. J. Robertson and L. Lin, "Fermi level pinning in Si, Ge and GaAs systems-MIGS or defects?," in IEDM Tech. Dig., 2009, pp. 119-122.
15. J. Robertson, "Band alignment at metal-semiconductor and metal-oxide interfaces," Phys. Status Solidi A, vol. 207, no. 2, pp. 261-269, Feb. 2010.
16. W. Gao, J. F. Conley, and Y. Ono, "Stacked metal layers as gates for MOSFET threshold voltage control," in Mat. Res. Soc. Symp. Proc., Spring 2003, vol. 765, pp. D1.4.1-D1.4.6.
17. C. H. Lu, G. M. T. Wong, R. Birringer, R. Dauskardt, M. D. Deal, B. M. Clemens, and Y. Nishi, "Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model," J. Appl. Phys., vol. 107, p. 063710, Mar. 2010.
18. B. Magyari-Kope, S. Park, L. Colombo, Y. Nishi, and K. Cho, "Ab initio study of Al-Ni bilayers on SiO2: Implications to effective work function modulation in gate stacks," J. Appl. Phys., vol. 105, p. 013711, Jan. 2009.