Interfacial differences in enhanced schottky barrier height Au/n-GaAs diodes deposited at 77 K

Applied Surface Science

Volumn 253, Issue 6, 2007, Pages 3298-3302

  Herrero, Andrew M ^a   Gerger, A M ^a   Gila, B P ^a   Pearton, S J ^a   Wang, Hung Ta ^b   Jang, S ^b   Anderson, T ^b   Chen, J J ^b   Kang, B S ^b   Ren, F ^b   Shen, H ^c   LaRoche, Jeffrey R ^d   Smith, Kurt V ^d  

^a UNIVERSITY OF FLORIDA   (United States)

^b University of Florida   (United States)

^c U S ARMY RESEARCH LABORATORY   (United States)

^d RAYTHEON COMPANY   (United States)

Author keywords

Barrier height; GaAs

Indexed keywords

INTERFACES (MATERIALS); MESFET DEVICES; THERMAL EFFECTS;

BARRIER HEIGHT; TEMPERATURE DIODES;

SCHOTTKY BARRIER DIODES;

EID: 33845810551     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.07.032     Document Type: Article

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