Local interface dipoles cind the tuning of the Al/GaAs(100) Schottky-barrier height with ultrathin Si interlayers

Europhysics Letters

Volumn 36, Issue 1, 1996, Pages 67-72

  Berthod, C ^a   Binggeli, N ^a   Baldereschi, A ^a  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0030518050     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i1996-00188-3     Document Type: Article

References (18)

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