On the alleviation of Fermi-level pinning by ultrathin insulator layers in Schottky contacts

Journal of Applied Physics

Volumn 111, Issue 7, 2012, Pages

  Mönch, Winfried ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BRANCH-POINT ENERGIES; DEPINNING; ELECTRIC DIPOLE; FERMI LEVEL PINNING; HYDROGEN ADATOMS; INTERFACE-INDUCED GAP STATE; IONIC CHARACTER; OHMIC BEHAVIOR; SCHOTTKY CONTACTS; ULTRATHIN INSULATORS; VALENCE-BAND OFFSET;

ADATOMS; ELECTRIC CURRENTS; GERMANIUM; HYDROGEN; INTERFACE STATES; SULFUR;

METALS;

EID: 84861730609     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699180     Document Type: Conference Paper

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