Molecule-metal polarization at rectifying GaAs interfaces

Journal of Physical Chemistry B

Volumn 107, Issue 26, 2003, Pages 6360-6376

  Vilan, Ayelet ^a,b   Ghabboun, Jamal ^a   Cahen, David ^a  

^a WEIZMANN INSTITUTE OF SCIENCE   (Israel)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; MONOLAYERS; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS;

ELECTRON AFFINITY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038441896     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp026779b     Document Type: Article

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