Schottky-barrier heights of metal/alpha-SiC{0001} interfaces by first-principles calculations

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 8, 2007, Pages 2972-2976

  Tanaka, Shingo ^a   Tamura, Tomoyuki ^a   Okazaki, Kazuyuki ^a   Ishibashi, Shoji ^a   Kohyama, Masanori ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURES; ELECTRONIC STRUCTURES; ENERGY REGIONS; EXTENDED DEFECTS; FIRST-PRINCIPLES CALCULATIONS; INTERFACE DIPOLES; INTERNATIONAL CONFERENCES; INTRINSIC RELATION; METAL ELECTRONEGATIVITY; METAL SPECIES; MULTI LAYERING; PROJECTOR-AUGMENTED WAVE; SCHOTTKY BARRIER HEIGHTS; TERMINATED INTERFACES; WORK FUNCTIONS;

CHEMICAL BONDS; COPPER; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTROCHEMICAL PROPERTIES; ELECTRONEGATIVITY; ELECTRONIC STRUCTURE; EXPLOSIVE ACTUATED DEVICES; GOLD; KETONES; METALS; NICKEL; PLATINUM; PLATINUM METALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR METAL BOUNDARIES; SILICON; SILICON CARBIDE;

CRYSTAL ATOMIC STRUCTURE;

EID: 35649000442     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200675489     Document Type: Conference Paper

References (29)

1. W. J. Choyke and L. Patrick, Silicon Carbide - A High Temperature Semiconductor, edited by J. R. O'Conner and J. Smiltens (Pergamon Press, Oxford, 1960);
2. S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (eds.), Silicon Carbide and Related Materials 1995, IOP Conf. Proc. No. 142 (Institute of Physics and Physical Society, London, 1996).
3. J. R. Waldrop, R. W. Grant, Y. C. Wang, and R. F. Davis, J. Appl. Phys. 72, 4757 (1992);
4. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 62, 2685 (1993);
5. J. R Waldrop, J. Appl. Phys. 75, 4548 (1994).
6. L. M. Porter and R. F. Davis, Mater. Sci. Eng. B 34, 83 (1995).
7. A. Itoh and H. Matsunami, phys. stat. sol. (a) 162, 389 (1997).
8. S. Hara, T. Teraji, H. Okushi, and K. Kajimura, Appl. Surf. Sci. 117/118, 394 (1997).
9. W. Schottky, Z. Phys. 118, 539 (1942).
10. S. Tanaka and M. Kohyama, Phys. Rev. B 64, 235308 (2001).
11. V. Heine, Phys. Rev. 138, A1689 (1965);
12. S. G. Louie and M. L. Cohen, Phys. Rev. B 13, 2461 (1976);
13. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984).
14. W. Mönch, Electronic Properties of Semiconductor Interface, Springer Ser. Surf. Sci., Vol. 43 (Springer, 2004).
15. A. R. Miedema, P. F. de Châtel, and F. R. de Boer, Physica B 100, 1 (1980).
16. J. Hoekstra and M. Kohyama, Phys. Rev. B 57, 2334 (1998);
17. M. Kohyama and J. Hoekstra, Phys. Rev. B 61, 2672 (2000);
18. S. Tanaka and M. Kohyama, Appl. Surf. Sci. 216, 471 (2003).
19. N. Binggeli, P. Ferrara, and A. Baldereschi, Phys. Rev. B 63, 245306 (2001).
20. S. Tanaka, T. Tamura, K. Okazaki-Maeda, S. Ishibashi, and M. Kohyama, Mater. Trans. (2006), in print.
21. P. Blöchl, Phys. Rev. B 50, 17953 (1994);
22. N. A. W. Holzwarth, G. E. Matthews, R. B. Dunning, A. R. Tackett, and Y. Zeng, Phys. Rev. B 55, 2005 (1997);
23. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1996).
24. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
25. unpublised (developed by S. Ishibashi, T. Tamura, S. Tanaka, M. Kohyama, and K. Terakura).
26. J. P. A. Charlesworth, R W. Godby, and R. J. Needs, Phys. Rev. Lett. 70, 1685 (1993).
27. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977).
28. H. L. Skriver and N. L. Rosengaard, Phys. Rev. B 46, 7157 (1992).
29. Y. F. Dong, S. J. Wang, Y. P. Feng, and C. H. Huan, Phys. Rev. B 73, 045302 (2006).