Extraction of correct Schottky barrier height of sulfur implanted NiSi/n-Si junctions: Junction doping rather than barrier height lowering

Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

  Chan, J ^a   Martinez, N Y ^a   Fitzgerald, J J D ^a   Walker, A V ^a   Chapman, R A ^a   Riley, D ^b   Jain, A ^b   Hinkle, C L ^a   Vogel, E M ^a  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHT LOWERING; CONTACT RESISTIVITIES; DOPING CONCENTRATION; DOPING DENSITIES; ENHANCED FIELD EMISSION; EXTRACTION METHOD; IMPLANTED SAMPLES; INTERNAL PHOTOEMISSION; SCHOTTKY BARRIER HEIGHTS; SULFUR IMPLANTATION; SURFACE REGION;

SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SULFUR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960492718     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3609874     Document Type: Article

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