Thermal stability of Au schottky diodes on GaAs deposited at either 77 or 300 K

Journal of the Electrochemical Society

Volumn 153, Issue 9, 2006, Pages

  Wang, Hung Ta ^a,d   Kang, B S ^a,d   Ren, F ^a,d   Herrero, A ^a   Gerger, A M ^a   Gila, B P ^a,d   Pearton, S J ^a,d   Shen, H ^b   LaRoche, Jeffery R ^c   Smith, Kurt V ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c RAYTHEON COMPANY   (United States)

^d ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AU/GAAS DIODE; CRYOGENIC TEMPERATURES; GATE LEAKAGE CURRENT; LOW-TEMPERATURE-DEPOSITED DIODE;

ANNEALING; CRYOGENICS; DEPOSITION; DETERIORATION; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; GOLD; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE;

SCHOTTKY BARRIER DIODES;

EID: 33746501359     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2212049     Document Type: Article

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