Two levels of Ni/n-GaAs Schottky barrier heights formed on a wafer by controlling pH of pretreatment chemicals: effect of oxygen adsorption

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 10, 2000, Pages 5788-5793

  Tsuzuku, Tatsutoshi ^a   Sugimura, Tomoyuki ^a   Kasai, Yuuki ^a   Inokuma, Takao ^a   Iiyama, Kouichi ^a   Takamiya, Saburo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AMMONIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; HYDROCHLORIC ACID; NICKEL; OXYGEN; PH EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

AMMONIUM HYDROXIDE; BARRIER HEIGHT; CHEMICAL TREATMENT; SCHOTTKY JUNCTION; WAFER;

SEMICONDUCTOR JUNCTIONS;

EID: 0034291420     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5788     Document Type: Article

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