Termination effects at metal/ceramic junctions: Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems

Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 23, 2001, Pages

  Profeta, G ^a   Blasetti, A ^a   Picozzi, S ^a   Continenza, A ^a   Freeman, A J ^b  

^a UNIVERSITY OF L'AQUILA   (Italy)

^b NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL; SILICON CARBIDE;

ADHESION; ARTICLE; CALCULATION; CERAMICS; ELECTRON; ENERGY;

EID: 0035893986     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.64.235312     Document Type: Article

References (24)

1. SiC Materials and Devices, Vol. 52 of Semiconductors and Semi-metals, edited by Y. S. Park (Academic Press, San Diego, 1998).
2. R. Kaplan and V. M. Bermudez, in Properties of Silicon Carbide, EMIS Data reviews Series, No. 13, edited by G. L. Harris (INSPEC, London, 1995) p. 101.
3. V. Saxena, J N. Su, and A J. Steckl, IEEE Trans. Electron Devices46, 456 (1999).
4. G. Profeta, A. Continenza, and A J. Freeman, Phys. Rev. B64, 045303 (2001).
5. H J F. Jansen and A J. Freeman, Phys. Rev. B30, 561 (1984);
6. Phys. Rev. BM. Weinert, H. Krakauer, E. Wimmer, and A J. Freeman, 24, 864 (1981), and reference therein.
7. H J. Monkhorst and J D. Park, Phys. Rev. B13, 5188 (1976).
8. C G. Van de Walle, Phys. Rev. B39, 1871 (1988).
9. M. Kohyama and J. Hoekstra, Phys. Rev. B61, 2672 (2000).
10. J. Hoekstra and M. Kohyama, Phys. Rev. B57, 2334 (1998).
11. J R. Smith, Tao Hong, and D J. Drolovitz, Phys. Rev. Lett.72, 4021 (1994).
12. A. Baldereschi, S. Baroni, and R. Resta, Phys. Rev. Lett.61, 734 (1988).
13. S G. Louie, J R. Chelikowsky, and M L. Cohen, Phys. Rev. B15, 2154 (1977).
14. C. Berthod, J. Bardi, N. Binggeli, and A. Baldereschi, J. Vac. Sci. Technol. B14, 3000 (1996);
15. M. Peressi, N. Binggeli, and A. Baldereschi, J. Phys. D31, 1273 (1998).
16. S. Picozzi, A. Continenza, G. Satta, S. Massidda, and A J. Freeman, Phys. Rev. B61, 16 736 (2000).
17. S. Ossicini, C. Arcangeli, and O. Bisi, Phys. Rev. B43, 9823 (1991).
18. S H. Wei and A. Zunger, Phys. Rev. Lett.59, 144 (1987).
19. S. Massidda, B I. Min, and A J. Freeman, Phys. Rev. B35, 9871 (1987).
20. K J. Schoen, J M. Woodall, and J A. Cooper, IEEE Trans. Electron Devices45, 1595 (1998).
21. S R. Nishitani, S. Fujii, M. Mizuno, I. Tanaka, and H. Adachi, Phys. Rev. B58, 9741 (1998).
22. W. Schottky, Phys. Z.41, 570 (1940).
23. M. van Schilfgaarde and N. Newman, Phys. Rev. Lett.65, 2728 (1990).
24. A. Ruini, R. Resta, and S. Baroni, Phys. Rev. B57, 5742 (1998).