Improvements to the Schottky barrier heights of intimate metal - InGaAs contacts by low temperature metallisation

Surface Science

Volumn 352-354, Issue , 1996, Pages 850-854

  Clark, S A ^a   Wilks, S P ^b   Kestle, A ^c   Westwood, D I ^c   Elliott, M ^c  

^a SHEFFIELD HALLAM UNIVERSITY   (United Kingdom)

^b SWANSEA UNIVERSITY   (United Kingdom)

^c CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Contacts; Copper; Electrical transport measurements; Evaporation and sublimation; Gold; Indium; Indium phosphide; Indium gallium arsenide; Interface states; Low index single crystal surfaces; Metal semiconductor interfaces; Metallic surfaces; Molecular beam

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; EVAPORATION; HETEROJUNCTIONS; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; METALLIZING; MOLECULAR BEAM EPITAXY; POINT CONTACTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBLIMATION;

IN SITU CURRENT VOLTAGE MEASUREMENTS; INTERFACE STATES; METAL CONTACTS;

SURFACE STRUCTURE;

EID: 0030145198     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01286-9     Document Type: Article

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