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Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

Impact of fixed charge on metal-insulator-semiconductor barrier height reduction

(5) Hu, Jenny a Nainani, Aneesh a Sun, Yun b Saraswat, Krishna C a Philip Wong, H S a

a Stanford University (United States)

b SLAC NATIONAL ACCELERATOR LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; FERMI LEVEL PINNING; FIXED CHARGES; INTERFACE DIPOLE; METAL-INSULATOR-SEMICONDUCTOR CONTACTS; METAL-INSULATOR-SEMICONDUCTORS; NON-IDEALITIES; SCHOTTKY BARRIER HEIGHTS; ULTRATHIN INSULATORS;

GRAIN SIZE AND SHAPE; METAL INSULATOR BOUNDARIES; MIS DEVICES; SCHOTTKY BARRIER DIODES; STOICHIOMETRY;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 84555218435 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3669414 Document Type: Article

Times cited : (60)

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