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Volumn 57, Issue 16, 1998, Pages 9757-9762

Formation energy, lattice relaxation, and electronic structure of junctions

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001584864     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.57.9757     Document Type: Article
Times cited : (18)

References (21)
  • 16
    • 0003044821 scopus 로고
    • These authors revised the band-structure model by J. C. Costa, T. J. Miller, F. Williamson, and M. I. Nathan, J. Appl. Phys. 70, 2173 (1991), to incorporate the effect of strain on the Si band gap.
    • (1991) J. Appl. Phys. , vol.70 , pp. 2173
    • Costa, J.1    Miller, T.2    Williamson, F.3    Nathan, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.