Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 11, 2011, Pages

  Nishi, Yoshifumi ^a   Yamauchi, Takashi ^a   Marukame, Takao ^a   Kinoshita, Atsuhiro ^a   Koga, Junji ^a   Kato, Koichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 80053582373     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.115323     Document Type: Article

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