Unpinning of the Au/GaAs interfacial Fermi level by means of ultrathin undoped silicon interlayer inclusion

Journal of Applied Physics

Volumn 87, Issue 2, 2000, Pages 795-800

  Ivanco, J ^a,c   Kobayashi, H ^a   Almeida, J ^b   Margaritondo, G ^b  

^a OSAKA UNIVERSITY   (Japan)

^b EPFL   (Switzerland)

^c Slovenska Akademia Vied   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001545248     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371943     Document Type: Article

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