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Applied Physics Letters

Volumn 95, Issue 22, 2009, Pages

Near band edge Schottky barrier height modulation using high- κ dielectric dipole tuning mechanism

(6) Coss, B E a,b Loh, W Y a Wallace, R M b Kim, J b Majhi, P a Jammy, R a

a SEMATECH (United States)

b UNIVERSITY OF TEXAS AT DALLAS (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; DIPOLE POTENTIAL; EFFECTIVE WORK FUNCTION; INTERFACIAL DIPOLES; METAL SEMICONDUCTOR INTERFACE; NEAR BAND EDGE; P-TYPE; SCHOTTKY BARRIER HEIGHT MODULATION; SCHOTTKY BARRIER HEIGHTS; THIN LAYERS; TUNING MECHANISM; VALENCE BAND EDGES;

DIELECTRIC MATERIALS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; TUNING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 71949122204 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3263719 Document Type: Article

Times cited : (51)

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