Barrier height enhancement and temperature dependence of the electrical characteristics of Al Schottky contacts on p-GaAs with organic Rhodamine B interfacial layer

Superlattices and Microstructures

Volumn 52, Issue 3, 2012, Pages 470-483

  Soylu, Murat ^a   Yakuphanoglu, Fahrettin ^b  

^a BINGOL UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

Author keywords

Electrical parameters; Inorganic semiconductor; Organic compound; Temperature effect

Indexed keywords

BARRIER HEIGHT ENHANCEMENT; BARRIER HEIGHTS; CHARACTERISTIC PARAMETER; DIODE PARAMETERS; ELECTRICAL CHARACTERISTIC; ELECTRICAL PARAMETER; GAAS; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; IDEALITY FACTORS; INORGANIC SEMICONDUCTORS; INTERFACIAL LAYER; RHODAMINE B; ROOM TEMPERATURE; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SPACE CHARGE REGIONS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; ZERO-BIAS;

ORGANIC COMPOUNDS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; THERMAL EFFECTS; THERMIONIC EMISSION;

GALLIUM ARSENIDE;

EID: 84863209707     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2012.05.022     Document Type: Article

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