Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 2114-2118

  Berthod, C ^a,d   Binggeli, N ^a   Baldereschi, A ^b,c  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b EPFL   (Switzerland)

^c UNIVERSITY OF TRIESTE   (Italy)

^d UNIVERSITY OF GENEVA   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044524488     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

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