Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Kobayashi, Masaharu ^a   Kinoshita, Atsuhiro ^a   Saraswat, Krishna ^a   Wong, H S Philip ^a   Nishi, Yoshio ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; FERMI LEVEL; FERMIONS; FIELD EFFECT TRANSISTORS; GERMANIUM; METALS; MODULATION; NITRIDES; OHMIC CONTACTS; PROBABILITY DENSITY FUNCTION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR METAL BOUNDARIES; SILICON NITRIDE; TRANSISTORS; WORK FUNCTION;

DEPINNING; FERMI-LEVEL PINNING; FIELD EFFECTS; INTERFACIAL LAYERS; METAL SOURCE/DRAIN; METAL WORK FUNCTIONS; METAL-OXIDE SEMICONDUCTORS; NITRIDE LAYERS; SCHOTTKY BARRIER HEIGHT MODULATIONS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; SOURCE/DRAIN RESISTANCES; THICKNESS DEPENDENCES; WORK-FUNCTION DIFFERENCES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59349099753     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3065990     Document Type: Article

References (18)

1. J. P. Snyder, C. R. Helms, and Y. Nishi, Appl. Phys. Lett. 0003-6951 10.1063/1.114513 67, 1420 (1995).
2. J. Kedzierski, P. Xuan, E. H. Anderson, J. Boker, T. -J. King, and C. Hu, Tech. Dig.-Int. Electron Devices Meet. 2000, 57. 0003-6951
3. A. Kinoshita, Y. Tsuchiya, A. Yagishita, K. Uchida and J. Koga, Dig. Tech. Pap.-Symp. VLSI Technol. 2004, 168.
4. Y. Kamata, Y. Kamimuta, T. Ino, R. Iijima, M. Koyama, and A. Nishiyama, Tech. Dig.-Int. Electron Devices Meet. 2005, 441. 0003-6951
5. P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, A. Stesmans, L. -A. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M. M. Heyns, Tech. Dig.-Int. Electron Devices Meet. 2006, 655. 0003-6951
6. T. Yamamoto, Y. Yamashita, M. Harada, N. Taoka, K. Ikeda, K. Suzuki, O. Kiso, N. Sugiyama, and S. Takagi, Tech. Dig.-Int. Electron Devices Meet. 2007, 1041. 0003-6951
7. C. O. Chui, H. Kim, P. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 2003, 437. 0003-6951
8. S. J. Wang, S. J. Lee, F. Gao, N. Wu, C. X. Zhu, J. S. Pan, L. J. Tang, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 2004, 307. 0003-6951
9. D. Kuzum, A. J. Pethe, T. Krishnamohan, Y. Oshima, Y. Sun, J. P. McVittie, P. A. Pianetta, P. C. McIntyre, and K. C. Saraswat, Tech. Dig.-Int. Electron Devices Meet. 2007, 723. 0003-6951
10. T. Takahashi, T. Nishimura, L. Chen, S. Sakata, K. Kita, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 2007, 697. 0003-6951
11. D. Han, Y. Wang, D. Tian, W. Wang, X. Liu, J. Kang, and R. Han, Microelectron. Eng. 0167-9317 10.1016/j.mee.2005.06.004 82, 93 (2005).
12. R. Li, H. B. Yao, S. J. Lee, D. Z. Chi, M. B. Yu, G. Q. Lo, and D. L. Kwong, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.09.033 504, 28 (2006).
13. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 0003-6951 10.1063/1.2410241 89, 252110 (2006).
14. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 0003-6951 10.1063/1.2789701 91, 123123 (2007).
15. D. Connelly, C. Faulkner, D. E. Grupp, and J. S. Harris, IEEE Trans. Nanotechnol. 3, 98 (2004). 1536-125X
16. V. Heine, Phys. Rev. 138, A1689 (1965).
17. W. Monch, Electronic Properties of Semiconductor Interfaces (Springer, New York, 2004).
18. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).