Schottky barrier height systematics studied by partisan interlayer

Thin Solid Films

Volumn 557, Issue , 2014, Pages 254-257

  Long, Wei ^a,c   Li, Yang ^b   Tung, Raymond T ^a,b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b CITY UNIVERSITY OF NEW YORK   (United States)

^c Tianwei New Energy Holdings Co Ltd   (China)

Author keywords

Fermi level; Interface; Metal semiconductor interaction; Partisan interlayer; Schottky barrier height; Semiconductor; Surface

Indexed keywords

FERMI LEVEL; INTERFACES (MATERIALS); METALS; SEMICONDUCTOR MATERIALS; SURFACES;

ATOMIC INTERLAYERS; METAL SEMICONDUCTOR INTERFACE; METAL SEMICONDUCTORS; OVERALL EFFECTIVENESS; PARTISAN INTERLAYER; SCHOTTKY BARRIER HEIGHTS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84897915421     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.10.075     Document Type: Article

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