Selenium segregation for effective schottky barrier height reduction in NiGe/n-Ge contacts

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 773-775

  Tong, Yi ^a   Liu, Bin ^a   Lim, Phyllis Shi Ya ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Nickel germanide (NiGe); Schottky barrier height; segregation; selenium implant

Indexed keywords

GERMANIDES; NICKEL GERMANIDE; NICKEL MONOGERMANIDE; REDUCTION TECHNOLOGIES; SCHOTTKY BARRIER HEIGHTS; SELENIUM SEGREGATIONS;

ION IMPLANTATION; NICKEL COMPOUNDS; SEGREGATION (METALLOGRAPHY); SELENIUM; SEMICONDUCTOR METAL BOUNDARIES;

GERMANIUM;

EID: 84861713784     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191760     Document Type: Article

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