Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction

Applied Physics Letters

Volumn 102, Issue 3, 2013, Pages

  Koike, Masahiro ^a   Kamimuta, Yuuichi ^a   Tezuka, Tsutomu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP DONOR; ELECTRON CONCENTRATION; N-TYPE DOPANTS; SCHOTTKY BARRIER HEIGHTS;

GERMANIUM; MODULATION; PHOSPHORUS; SULFUR;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84872914279     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789437     Document Type: Article

References (15)

1. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).
2. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006). 10.1063/1.2410241
3. P. Tsipas and A. Dimoulas, Appl. Phys. Lett. 94, 012114 (2009). 10.1063/1.3068497
4. K. Ikeda, Y. Yamashita, N. Sugiyama, N. Taoka, and S. Takagi, Appl. Phys. Lett. 88, 152115 (2006). 10.1063/1.2191829
5. T. Nishimura, S. Sakata, K. Nagashio, K. Kita, and A. Toriumi, Appl. Phys. Express 2, 021202 (2009). 10.1143/APEX.2.021202
6. M. Koike, Y. Kamimuta, and T. Tezuka, Appl. Phys. Express 4, 021301 (2011). 10.1143/APEX.4.021301
7. D. P. Brunco, K. Opsomer, B. De Jaeger, G. Winderickx, K. Verheyden, and M. Meuris, Electrochem. Solid-State Lett. 11, H39 (2008). 10.1149/1.2820441
8. H. G. Grimmeiss, L. Montelius, and K. Larsson, Phys. Rev. B 37, 6916 (1988). 10.1103/PhysRevB.37.6916
9. J. Coutinho, R. Jones, V. J. B. Torres, M. Barroso, S. Öberg, and P. R. Briddon, J. Phys. Condens. Matter 17, L521 (2005). 10.1088/0953-8984/17/48/ L02
10. C. M. Weinert and M. Scheffler, in Defects in Semiconductors, edited by, H. J. von Bardeleben, Mater. Sci. Forum Vol. 10-12 (Trans Tech Publications Ltd., Switzerland, 1986), p. 25.
11. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd Revised ed. (Clarendon, Oxford, 1988).
12. S.-M. Koh, G. S. Samudra, and Y.-C. Yeo, IEEE Trans. Electron Devices 59, 1046 (2012). 10.1109/TED.2012.2185799
13. J. Chan, N. Y. Martinez, J. J. D. Fitzgerald, A. V. Walker, R. A. Chapman, D. Riley, A. Jain, C. L. Hinkle, and E. M. Vogel, Appl. Phys. Lett. 99, 012114 (2011). 10.1063/1.3609874
14. Y. Tong, B. Liu, P. S. Y. Lim, and Y.-C. Yeo, IEEE Electron Device Lett. 33, 773 (2012). 10.1109/LED.2012.2191760
15. T. Nakayama and K. Kobinata, Thin Solid Films 520, 3374 (2012). 10.1016/j.tsf.2011.10.091