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Volumn 90, Issue 1-2, 2002, Pages 171-175
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Chemical lowering of the interface Fermi level of n and p types GaAs/Al Schottky diodes
a
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Author keywords
Al GaAs structures; Fermi level; Schottky barrier heights
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Indexed keywords
ADSORPTION;
ALUMINUM;
CHEMICAL MODIFICATION;
FERMI LEVEL;
INTERFACES (MATERIALS);
SCHOTTKY BARRIER DIODES;
CHEMICAL LOWERING;
SEMICONDUCTING GALLIUM ARSENIDE;
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EID: 0037034723
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(01)00935-7 Document Type: Article |
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Times cited : (9)
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References (19)
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